It can be used in a single conversion design from high input 48V down to lower point of load voltages such as 1V. Server/telecom 48V – POL : A great application example of LMG5200 is in telecom/server POL.
![nrf52 totem pole output nrf52 totem pole output](https://i.ytimg.com/vi/rhmelFYaLVw/maxresdefault.jpg)
The use of GaN enables higher modulation frequencies which reduces output filtering requirements, allowing greater power density. Used to boost the output voltage from the panels, and generate the AC output sine wave.
NRF52 TOTEM POLE OUTPUT FULL
It enables higher efficiency LLC (resonant) stages and phase-shifted full bridge running at higher frequency to increase power density.
NRF52 TOTEM POLE OUTPUT DRIVER
![nrf52 totem pole output nrf52 totem pole output](https://i.stack.imgur.com/JofIR.png)
Though GaN have been in production from a number of years, TI has gone one step ahead in integrating the GaN FET and driver in the same package reducing the parasitic inductance and improving switching performance. At higher slew rates certain packages of GaN fets can limit the switching performance.Because of these features they can switch at high switching frequencies (high slew rates) improving power density, transient performance and system running cooler. GaN transistors have switching performance advantages than Silicon Fets due to lower terminal capacitances for the same Ron and lack of body diode reverse recovery loss.Gallium Nitride (GaN) is one of the best silicon alternatives in today’s world.There are basically 2 products, the high voltage 600V LMG3410 and the medium voltage 80V LMG5200. These GaN FETs come with the driving circuitry included in them, hence are also quite often referred as modules. TI has introduced the latest GaN( Gallium Nitride) power FETs.